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WTC2306
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
DRAIN CURRENT 5.3 AMPERS DRAIN SOUCE VOLTAGE 20 VOLTAGE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <90m@V GS =12V *Rugged and Reliable *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-23 Package
SOURCE
2
3 1 2
SOT-23
Applications
*Power Management in Notebook Computer *Portable Equipment *Battery Powered System
( Maximum Ratings(TA=25 Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 ,VGS@4.5V(TA ,VGS@4.5V(TA Pulsed Drain Current1,2 Total Power Dissipation(TA=25 ) Maximum Junction-ambient3
Unless Otherwise Specified) Symbol
VDS VGS ID IDM PD R
JA
Value
20
Unit
V
12 5.3 4.3 10 1.38 90 -55~+150 W /W A
Operating Junction and Storage Temperature Range
TJ, Tstg
Device Marking
WTC2306=2306
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WTC2306
Electrical Characteristics (TA = 25
Characteristic Unless otherwise noted) Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage VGS=0,ID=250A Gate-Source Threshold Voltage VDS=VGS,ID=250A Gate-Source Leakage Current VGS= 12V Drain-Source Leakage Current(Tj=25) VDS=20V,VGS=0 Drain-Source Leakage Current(Tj=70) VDS=16V,VGS=0 Drain-Source On-Resistance VGS=10V,ID=5.5A VGS=4.5V,ID=5.3A VGS=2.5V,ID=2.6A VGS=1.8V,ID=1.0A Forward Transconductance VDS=5V,ID=5.3A RDS(on) 13 30 35 50 90 m IDSS 10 V(BR)DSS VGS(Th) IGSS 20 0.5 V 1.2 nA
100 1
A
gfs
S
Dynamic
Input Capacitance VGS=0V,VDS=15V,f=1.0MHz Output Capacitance VGS=0V,VDS=15V,f=1.0MHz Reverse Transfer Capacitance VGS=0V,VDS=15V,f=1.0MHz Ciss Coss Crss 603 144 111 pF
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WTC2306
Switching
Turn-on Delay Time2 VDS=15V,VGS=10V,ID =1A,R D=15,R G=2 Rise Time VDS=15V,VGS=10V,ID =1A,R D=15,R G=2 Turn-off Delay Time VDS=15V,VGS=10V,ID =1A,R D=15,R G=2 Fall Time VDS=15V,VGS=10V,ID =1A,R D=15,R G=2 Total Gate Charge2 VDS=10V,VGS=4.5V,ID=5.3A Gate-Source Charge VDS=10V,VGS=4.5V,ID=5.3A Gate-Drain Change VDS=10V,VGS=4.5V,ID=5.3A td(on) 6 14 18.4 2.8 8.7 1.5 3.6 ns td (off) nC
tr
tf
Qg Qgs Qgd
Source-Drain Diode Characteristics
Forward On Voltage2
VGS=0,IS=1.2A,TJ=25 C
VSD
-
16.8 11
1.2 -
V
Reverse Recovery Time VGS=0,IS=5A,dl/dt=100A/ s Reverse Recovery Charge VGS=0,IS=5A,dl/dt=100A/ s
Trr Q rr
nS nC
Note: 1. Pulse width limited by Max, junction temperature. 2. pulse width300s, duty cycle2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270/W when mounted on min, copper pad.
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WTC2306
80 50
TA=25C
5.0V 4.5V
TA=125C
5.0V 4.5V 4.0V
ID ,DRAIN CURRENT (A)
60
ID ,Drain Current (A)
4.0V
40
30
40
VG=2.5V
20
20
VG=2.5V
10
0
0
1
2
3
4
5
6
7
0
0
1
FIG.1 Typical Output Characteristics
100 1.8
VDS ,DRAIN-TO-SOURCE VOLTAGE(V)
Fig.2 Typical Output Characteristics
VDS ,Drain-to-source Voltage(V)
2
3
4
5
6
7
8
80
I D = 5.3A TA = 25C Normalized RDs(on)
1.6 1.4 1.2 1.0 0.8
ID = 5.3A VG = 4.5V
RDs(on) (m)
60
40
20
1
Fig.3 On-Resistance v.s. Gate Voltage
100
1.6 1.4
VGS ,Gate-to-source Voltage(V)
3
5
7
9
11
0.6
-50
0
50
100
150
Fig.4 Normalized OnResistance
Tj ,Junction Temperature(C)
10
Tj = 150C
1.2
VGS(th)(V)
1.6
1
1.0
Tj = 25C
0.8
IS( A )
0.1
0.6 0.4
0.01
0
Fig.5 Forward Characteristics of Reverse Diode
VDS ,Source-to-Drain Voltage(V)
0.4
0.8
1.2
0.2
-50
Fig.6 Gate Threshold Voltage v.s. Junction Temperature
Tj ,Junction Temperature(C)
0
50
100
150
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WTC2306
14
1000
f = 1.0MHz
VGS , Gate to Source Voltage(V)
12
I D = 5.3A VDS = 16V
Ciss
10 8 6
C(pF)
100
4
Coss Crss
2 0
0
0
5
10
15
20
25
1
5
9
13
17
21
25
29
Fig 7. Gate Charge Characteristics
100
QG , Total Gate Charge(nC)
VDS, Drain-to-Source Voltage(V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5 0.2
10
Normalized Thermal Response(R ja)
0.1
0.1 0.05
PDM
ID(A)
1
1ms 10ms
0.01
0.01
t T
0.1
TA = 25C Single Pulse
0.01
100ms Is DC
1 10 100
Duty factor = t / T Peak Tj=PDM x R ju + Tu R ja=270C / W
Single pulse
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
VDS , Drain-to-Source Voltage(V)
t, Pulse Width(s)
Fig 9. Maximum Safe Operation Area
RD
Fig 10. Effective Transient Thermal Impedance
RD
D RG + G
VDS
TO THE OSCILLOSCOPE
D G
VDS
TO THE OSCILLOSCOPE 0.5x RATED VDS
0.75x RATED VDS
10V
S VGS
+ 1~3mA -
S
VGS
-
ID
ID
Fig 11. Switching Time Circuit
Fig.12 Gate Charge Circuit
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WTC2306
SOT-23 Outline Dimension
SOT-23
A
TOP VIEW D E G H
B
C
K J L M
Dim A B C D E G H J K L M
Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076
Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25
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